2019年8月末に購入したLenovo ThinkCentre M720qのメモリーを交換し、16GBytesから32GBytesに増量した。
メモリー増量の履歴
| 時期 | 価格 | |
|---|---|---|
| 2024/06 | 16GB×2=32GB | (2枚セット) 9,780円 |
| 2019/12 | 8GB×2=16GB | 3,645円×2＝7,290円 |
| 2019/08 | ThinkCentre M720q 新規購入時 4GB×2=8GB | (PC本体) 59,514円 |
ついでに、過去のメモリー交換記録から価格推移の表も貼り付けておく。
| 時期 | 価格 | 容量と取り付けたマシン |
|---|---|---|
| 2024/06 | 4,980円 | DDR4-2666, 16GB×2枚, ThinkCentre M720q |
| 2024/06 | 4,980円 | DDR4-2666, 16GB×1枚, 富士通 LIFEBOOK U938/T |
| 2022/06 | 3,673円 | DDR3-1600, 8GB×2枚, HP EliteDesk 800 G1 DM |
| 2021/09 | 6,425円 | DDR3L-1600, 8GB×2枚, 東芝 dynabook R63/U |
| 2019/12 | 7,290円 | DDR4-2666, 8GB×2枚, Lenovo ThinkCentre M720q |
| 2015/07 | 11,920円 | DDR3-1600, 4GB×4枚（実際2枚）, HP s5350 |
| 2009/12 | 29,600円 | DDR2-800, 2GB×8枚（実際1枚）, Dell Inspiron mini 10v |
２枚セット品のほうが少し安い
Amazonで、PC4-21300 (DDR4-2666) 16GBytes×2枚セット品を9,780円で購入した。このメモリーは単体で4,980円で売られているものと同一で、セットになると180円ほど安くなっている。
AmazonでPC4-21300メモリーを16GB単体で買う場合と、2枚セット品で買う場合の価格例
CFD W4N2666PS-16G （PC4-21300 16GB×2枚）
交換作業
ThinkCentre M720qのメモリー交換前
ThinkCentre M720qのメモリーソケット（DDR4 SO-DIMM 260pin）
交換前後のメモリー
ThinkCentre M720qのメモリー交換後
UEFI BIOSでのメモリーテスト
UEFI BIOSでのメモリー認識状況
この画面では「Single Channel」で認識されている。Windows起動後のHWiNFOではDual Channelと表示されるので、起動時の何処かの時点でアクセス方式が変更になるのだろう。
UEFI BIOSでのメモリーテスト実行中
約4分でテストが終了し、「Quick Random Pattern Test : PASSED」と表示された。
UEFI BIOSでのメモリーテスト結果
交換前のメモリーを調査
HWiNFOで交換前のメモリー（8GB×2）を調査
HWiNFOで交換前のメモリー（8GB×2）を調査
HWiNFO64 Version 8.04-5470 WINDOWS11M720Q ------------------------------------------------------------ [Current Computer] [Operating System] Memory -------------------------------------------------------------------- [General Information] Total Memory Size: 16 GBytes Total Memory Size [MB]: 16384 [Current Performance Settings] Maximum Supported Memory Clock: 1200.0 MHz Current Memory Clock: 1197.0 MHz Current Timing (tCAS-tRCD-tRP-tRAS): 15-17-17-32 Memory Channels Supported: 2 Memory Channels Active: 2 Command Rate (CR): 2T Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 6T Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 4T Read to Read Delay (tRDRD_SD) Same DIMM: 6T Read to Read Delay (tRDRD_DD) Different DIMM: 7T Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 6T Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 4T Write to Write Delay (tWRWR_SD) Same DIMM: 7T Write to Write Delay (tWRWR_DD) Different DIMM: 7T Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 9T Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 9T Read to Write Delay (tRDWR_SD) Same DIMM: 10T Read to Write Delay (tRDWR_DD) Different DIMM: 11T Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 28T Write to Read Delay (tWRRD_DG/TwrrdScDlr) Different Bank Group: 22T Write to Read Delay (tWRRD_SD) Same DIMM: 6T Write to Read Delay (tWRRD_DD) Different DIMM: 6T Read to Precharge Delay (tRTP): 9T Write to Precharge Delay (tWTP): 30T Write Recovery Time (tWR): 19T RAS# to RAS# Delay (tRRD_L): 24T RAS# to RAS# Delay (tRRD_S): 18T Row Cycle Time (tRC): 49T Refresh Cycle Time (tRFC): 420T Four Activate Window (tFAW): 26T Row: 0 [BANK 0/ChannelA-DIMM0] - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G [General Module Information] Module Number: 0 Module Size: 8 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: D4N2666PS-8G Module Revision: 0.0 Module Serial Number: 1392727633 (51560353) Module Manufacturing Date: Year: 2019, Week: 45 Module Manufacturing Location: 0 SDRAM Manufacturer: SK Hynix DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Number Of Bank Groups: 4 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored [Intel Extreme Memory Profile (XMP)] XMP Revision: 2.0 [Certified Profile [Enabled]] Module VDD Voltage Level: 1.20 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 11.875 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.375 ns Minimum Row Precharge Time (tRPmin): 13.375 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns Row: 2 [BANK 2/ChannelB-DIMM0] - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G [General Module Information] Module Number: 2 Module Size: 8 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: D4N2666PS-8G Module Revision: 0.0 Module Serial Number: 1392726954 (AA530353) Module Manufacturing Date: Year: 2019, Week: 45 Module Manufacturing Location: 0 SDRAM Manufacturer: SK Hynix DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Number Of Bank Groups: 4 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored [Intel Extreme Memory Profile (XMP)] XMP Revision: 2.0 [Certified Profile [Enabled]] Module VDD Voltage Level: 1.20 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 11.875 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.375 ns Minimum Row Precharge Time (tRPmin): 13.375 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns
交換後のメモリーを調査
HWiNFOで交換後のメモリー（16GB×2）を調査
HWiNFOで交換前のメモリー（8GB×2）を調査
HWiNFO64 Version 8.04-5470 WINDOWS11M720Q ------------------------------------------------------------ [Current Computer] [Operating System] Memory -------------------------------------------------------------------- [General Information] Total Memory Size: 32 GBytes Total Memory Size [MB]: 32768 [Current Performance Settings] Maximum Supported Memory Clock: 1200.0 MHz Current Memory Clock: 1197.5 MHz Current Timing (tCAS-tRCD-tRP-tRAS): 15-17-17-32 Memory Channels Supported: 2 Memory Channels Active: 2 Command Rate (CR): 2T Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 6T Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 4T Read to Read Delay (tRDRD_SD) Same DIMM: 6T Read to Read Delay (tRDRD_DD) Different DIMM: 7T Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 6T Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 4T Write to Write Delay (tWRWR_SD) Same DIMM: 7T Write to Write Delay (tWRWR_DD) Different DIMM: 7T Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 9T Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 9T Read to Write Delay (tRDWR_SD) Same DIMM: 9T Read to Write Delay (tRDWR_DD) Different DIMM: 11T Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 28T Write to Read Delay (tWRRD_DG/TwrrdScDlr) Different Bank Group: 22T Write to Read Delay (tWRRD_SD) Same DIMM: 5T Write to Read Delay (tWRRD_DD) Different DIMM: 6T Read to Precharge Delay (tRTP): 9T Write to Precharge Delay (tWTP): 30T Write Recovery Time (tWR): 19T RAS# to RAS# Delay (tRRD_L): 24T RAS# to RAS# Delay (tRRD_S): 18T Row Cycle Time (tRC): 49T Refresh Cycle Time (tRFC): 420T Four Activate Window (tFAW): 26T Row: 0 [BANK 0/ChannelA-DIMM0] - 16 GB PC4-21300 DDR4 SDRAM Panram International W4N2666PS-16G [General Module Information] Module Number: 0 Module Size: 16 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: W4N2666PS-16G Module Revision: 0.0 Module Serial Number: 1395428268 (AC8B2C53) Module Manufacturing Date: Year: 2024, Week: 9 Module Manufacturing Location: 0 SDRAM Manufacturer: Samsung DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 2 Number Of Bank Groups: 4 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored Row: 2 [BANK 2/ChannelB-DIMM0] - 16 GB PC4-21300 DDR4 SDRAM Panram International W4N2666PS-16G [General Module Information] Module Number: 2 Module Size: 16 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: W4N2666PS-16G Module Revision: 0.0 Module Serial Number: 1395428648 (288D2C53) Module Manufacturing Date: Year: 2024, Week: 9 Module Manufacturing Location: 0 SDRAM Manufacturer: Samsung DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 2 Number Of Bank Groups: 4 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns (1333 MHz) Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored
