2019年8月末に購入したLenovo ThinkCentre M720qのメモリーを交換し、8GBytesから16GBytesに容量増加させた。
Amazon.co.jpで購入したメモリーはCFD Panram DDR4-2666 8GBytesを2枚。1枚3,645円で、2枚合計7,290円。
CFD Panram DDR4-2666 ノート用メモリ 260pin SO-DIMM 8GB ×2枚
RAMの価格はだんだん下がってきており、この2年間でいえば一番安くなっている。
新旧のメモリー
左側が交換前のRamaxel Technology製、右側が交換後のCFD Panram
ThinkCentre M720qのDIMMスロットに装着
交換後メモリーのSPD情報
交換前メモリーのSPD情報
交換後のシステム情報
交換前のシステム情報
アクセスタイミングが、交換前 17-17-17-39 から交換後 15-17-17-32 に短くなっている。システムの速度は、若干早くなるかな… と考えられる。
Windows版HWiNFO64で出力した新・旧のメモリー情報
交換後 メモリー CFD Panram DDR4-2666 SO-DIMM 8GB
Memory -------------------------------------------------------------------- [General information] Total Memory Size: 16 GBytes Total Memory Size [MB]: 16384 [Current Performance Settings] Maximum Supported Memory Clock: 1600.0 MHz Current Memory Clock: 1197.4 MHz Current Timing (tCAS-tRCD-tRP-tRAS): 15-17-17-32 Memory Channels Supported: 2 Memory Channels Active: 2 Command Rate: 2T Read to Read Delay (tRD_RD) Same Rank: 6T Read to Read Delay (tRD_RD) Different Rank: 4T Read to Read Delay (tRD_RD) Different DIMM: 7T Write to Write Delay (tWR_WR) Same Rank: 6T Write to Write Delay (tWR_WR) Different Rank: 4T Write to Write Delay (tWR_WR) Different DIMM: 7T Read to Write Delay (tRD_WR) Same Rank: 9T Read to Write Delay (tRD_WR) Different Rank: 9T Read to Write Delay (tRD_WR) Different DIMM: 11T Write to Read Delay (tWR_RD) Same Rank (tWTR): 28T Write to Read Delay (tWR_RD) Different Rank: 22T Write to Read Delay (tWR_RD) Different DIMM: 6T RAS# to RAS# Delay (tRRD): 8T Refresh Cycle Time (tRFC): 420T Four Activate Window (tFAW): 26T Row: 0 - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G ------ [General Module Information] Module Number: 0 Module Size: 8 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: D4N2666PS-8G Module Revision: 0.0 Module Serial Number: 1392727633 Module Manufacturing Date: Year: 2019, Week: 45 Module Manufacturing Location: 0 SDRAM Manufacturer: SK Hynix DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored [Intel Extreme Memory Profile (XMP)] XMP Revision: 2.0 [Certified Profile [Enabled]] Module VDD Voltage Level: 1.20 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 11.875 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.375 ns Minimum Row Precharge Time (tRPmin): 13.375 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns Row: 2 - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G ------ [General Module Information] Module Number: 2 Module Size: 8 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Panram International Module Part Number: D4N2666PS-8G Module Revision: 0.0 Module Serial Number: 1392726954 Module Manufacturing Date: Year: 2019, Week: 45 Module Manufacturing Location: 0 SDRAM Manufacturer: SK Hynix DRAM Steppping: 0.0 Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Device Width: 8 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns Maximum SDRAM Cycle Time (tCKAVGmax): 1.62500 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 12.000 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.500 ns Minimum Row Precharge Time (tRPmin): 13.500 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): 1 - 2 mm Address Mapping from Edge Connector to DRAM: Mirrored [Intel Extreme Memory Profile (XMP)] XMP Revision: 2.0 [Certified Profile [Enabled]] Module VDD Voltage Level: 1.20 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns CAS# Latencies Supported: 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 Minimum CAS# Latency Time (tAAmin): 11.875 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.375 ns Minimum Row Precharge Time (tRPmin): 13.375 ns Minimum Active to Precharge Time (tRASmin): 26.125 ns Supported Module Timing at 1333.3 MHz: 16-18-18-35 Supported Module Timing at 1200.0 MHz: 15-17-17-32 Supported Module Timing at 1066.7 MHz: 13-15-15-28 Supported Module Timing at 933.3 MHz: 12-13-13-25 Supported Module Timing at 800.0 MHz: 10-11-11-21 Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns
交換前 メモリー Ramaxel Technology DDR4-2666 SO-DIMM 8GB
Memory -------------------------------------------------------------------- [General information] Total Memory Size: 8 GBytes Total Memory Size [MB]: 8192 [Current Performance Settings] Maximum Supported Memory Clock: 1600.0 MHz Current Memory Clock: 1196.8 MHz Current Timing (tCAS-tRCD-tRP-tRAS): 17-17-17-39 Memory Channels Supported: 2 Memory Channels Active: 2 Command Rate: 2T Read to Read Delay (tRD_RD) Same Rank: 6T Read to Read Delay (tRD_RD) Different Rank: 4T Read to Read Delay (tRD_RD) Different DIMM: 7T Write to Write Delay (tWR_WR) Same Rank: 6T Write to Write Delay (tWR_WR) Different Rank: 4T Write to Write Delay (tWR_WR) Different DIMM: 7T Read to Write Delay (tRD_WR) Same Rank: 9T Read to Write Delay (tRD_WR) Different Rank: 9T Read to Write Delay (tRD_WR) Different DIMM: 11T Write to Read Delay (tWR_RD) Same Rank (tWTR): 30T Write to Read Delay (tWR_RD) Different Rank: 24T Write to Read Delay (tWR_RD) Different DIMM: 6T RAS# to RAS# Delay (tRRD): 8T Refresh Cycle Time (tRFC): 420T Four Activate Window (tFAW): 36T Row: 0 - 4 GB PC4-21300 DDR4 SDRAM Ramaxel Technology RMSA3270ME86H9F-26 -- [General Module Information] Module Number: 0 Module Size: 4 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Ramaxel Technology Module Part Number: RMSA3270ME86H9F-26 Module Revision: 4.1 Module Serial Number: 897281297 Module Manufacturing Date: Year: 2019, Week: 29 Module Manufacturing Location: 1 SDRAM Manufacturer: Micron Tech. Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Device Width: 16 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23 Minimum CAS# Latency Time (tAAmin): 13.750 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns Minimum Row Precharge Time (tRPmin): 13.750 ns Minimum Active to Precharge Time (tRASmin): 32.000 ns Supported Module Timing at 1333.3 MHz: 19-19-19-43 Supported Module Timing at 1200.0 MHz: 17-17-17-39 Supported Module Timing at 1066.7 MHz: 15-15-15-35 Supported Module Timing at 933.3 MHz: 13-13-13-30 Supported Module Timing at 800.0 MHz: 11-11-11-26 Supported Module Timing at 666.7 MHz: 10-10-10-22 Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 5.300 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.400 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): <= 1 mm Address Mapping from Edge Connector to DRAM: Standard Row: 2 - 4 GB PC4-21300 DDR4 SDRAM Ramaxel Technology RMSA3270ME86H9F-26 -- [General Module Information] Module Number: 2 Module Size: 4 GBytes Memory Type: DDR4 SDRAM Module Type: SO-DIMM Memory Speed: 1333.3 MHz (DDR4-2666 / PC4-21300) Module Manufacturer: Ramaxel Technology Module Part Number: RMSA3270ME86H9F-26 Module Revision: 4.1 Module Serial Number: 897281041 Module Manufacturing Date: Year: 2019, Week: 29 Module Manufacturing Location: 1 SDRAM Manufacturer: Micron Tech. Error Check/Correction: None [Module Characteristics] Row Address Bits: 16 Column Address Bits: 10 Module Density: 8192 Mb Number Of Ranks: 1 Device Width: 16 bits Bus Width: 64 bits Die Count: 1 Module Nominal Voltage (VDD): 1.2 V Minimum SDRAM Cycle Time (tCKAVGmin): 0.75000 ns Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23 Minimum CAS# Latency Time (tAAmin): 13.750 ns Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns Minimum Row Precharge Time (tRPmin): 13.750 ns Minimum Active to Precharge Time (tRASmin): 32.000 ns Supported Module Timing at 1333.3 MHz: 19-19-19-43 Supported Module Timing at 1200.0 MHz: 17-17-17-39 Supported Module Timing at 1066.7 MHz: 15-15-15-35 Supported Module Timing at 933.3 MHz: 13-13-13-30 Supported Module Timing at 800.0 MHz: 11-11-11-26 Supported Module Timing at 666.7 MHz: 10-10-10-22 Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 5.300 ns Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.400 ns Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns [Features] Module Temperature Sensor (TSOD): Not Supported Module Nominal Height: 29 - 30 mm Module Maximum Thickness (Front): 1 - 2 mm Module Maximum Thickness (Back): <= 1 mm Address Mapping from Edge Connector to DRAM: Standard
Linuxでメモリー関連情報を出力すると…
$ sudo dmidecode --type memory
[sudo] vm のパスワード:
# dmidecode 3.1
Getting SMBIOS data from sysfs.
SMBIOS 3.2.1 present.
# SMBIOS implementations newer than version 3.1.1 are not
# fully supported by this version of dmidecode.
Handle 0x003B, DMI type 16, 23 bytes
Physical Memory Array
Location: System Board Or Motherboard
Use: System Memory
Error Correction Type: None
Maximum Capacity: 32 GB
Error Information Handle: Not Provided
Number Of Devices: 2
Handle 0x003C, DMI type 17, 40 bytes
Memory Device
Array Handle: 0x003B
Error Information Handle: Not Provided
Total Width: 64 bits
Data Width: 64 bits
Size: 8192 MB
Form Factor: SODIMM
Set: None
Locator: ChannelA-DIMM0
Bank Locator: BANK 0
Type: DDR4
Type Detail: Synchronous
Speed: 2667 MT/s
Manufacturer: 0770
Serial Number: 51560353
Asset Tag: 9876543210
Part Number: D4N2666PS-8G
Rank: 1
Configured Clock Speed: 2400 MT/s
Minimum Voltage: 1.2 V
Maximum Voltage: 1.2 V
Configured Voltage: 1.2 V
Handle 0x003D, DMI type 17, 40 bytes
Memory Device
Array Handle: 0x003B
Error Information Handle: Not Provided
Total Width: 64 bits
Data Width: 64 bits
Size: 8192 MB
Form Factor: SODIMM
Set: None
Locator: ChannelB-DIMM0
Bank Locator: BANK 2
Type: DDR4
Type Detail: Synchronous
Speed: 2667 MT/s
Manufacturer: 0770
Serial Number: AA530353
Asset Tag: 9876543210
Part Number: D4N2666PS-8G
Rank: 1
Configured Clock Speed: 2400 MT/s
Minimum Voltage: 1.2 V
Maximum Voltage: 1.2 V
Configured Voltage: 1.2 V
$ sudo lshw -class memory
*-firmware
詳細: BIOS
ベンダー: LENOVO
物理ID: 0
バージョン: M1UKT45A
date: 07/11/2019
サイズ: 64KiB
容量: 11MiB
性能: pci upgrade shadowing cdboot bootselect socketedrom edd int13floppy1200 int13floppy720 int13floppy2880 int5printscreen int9keyboard int14serial int17printer acpi usb biosbootspecification uefi
*-memory
詳細: システムメモリー
物理ID: 3b
スロット: システムボードまたはマザーボード
サイズ: 16GiB
*-bank:0
詳細: SODIMM DDR4 同期 2667 MHz (0.4 ns)
製品: D4N2666PS-8G
ベンダー: Hitachi
物理ID: 0
シリアル: 51560353
スロット: ChannelA-DIMM0
サイズ: 8GiB
幅: 64 bits
クロック: 2667MHz (0.4ns)
*-bank:1
詳細: SODIMM DDR4 同期 2667 MHz (0.4 ns)
製品: D4N2666PS-8G
ベンダー: Hitachi
物理ID: 1
シリアル: AA530353
スロット: ChannelB-DIMM0
サイズ: 8GiB
幅: 64 bits
クロック: 2667MHz (0.4ns)
*-cache:0
詳細: L1 キャッシュ
物理ID: 45
スロット: L1 Cache
サイズ: 256KiB
容量: 256KiB
性能: synchronous internal write-back unified
設定: level=1
*-cache:1
詳細: L2 キャッシュ
物理ID: 46
スロット: L2 Cache
サイズ: 1MiB
容量: 1MiB
性能: synchronous internal write-back unified
設定: level=2
*-cache:2
詳細: L3 キャッシュ
物理ID: 47
スロット: L3 Cache
サイズ: 6MiB
容量: 6MiB
性能: synchronous internal write-back unified
設定: level=3
*-memory UNCLAIMED
詳細: RAM memory
製品: Cannon Lake PCH Shared SRAM
ベンダー: Intel Corporation
物理ID: 14.2
バス情報: pci@0000:00:14.2
バージョン: 10
幅: 64 bits
クロック: 33MHz (30.3ns)
性能: pm cap_list
設定: latency=0
リソース: メモリー:b1236000-b1237fff メモリー:b123c000-b123cfff
SPDはどうしても読めないみたいですね…
$ sudo modprobe eeprom $ sudo modprobe i2c-i801 $ i2cdetect -l i2c-3 unknown i915 gmbus dpd N/A i2c-1 unknown i915 gmbus dpc N/A i2c-6 unknown SMBus I801 adapter at efa0 N/A ← 対象 i2c-4 unknown DPDDC-B N/A i2c-2 unknown i915 gmbus misc N/A i2c-0 unknown i915 gmbus dpb N/A i2c-5 unknown DPDDC-D N/A $ sudo i2cdetect 6 ← 念の為、i2cチャンネル一覧をスキャンしてみる WARNING! This program can confuse your I2C bus, cause data loss and worse! I will probe file /dev/i2c-6. I will probe address range 0x03-0x77. Continue? [Y/n] 0 1 2 3 4 5 6 7 8 9 a b c d e f 00: -- -- -- -- -- 08 -- -- -- -- -- -- -- 10: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 20: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 30: 30 31 -- -- 34 35 36 -- -- -- -- -- -- -- -- -- 40: -- -- -- -- 44 -- -- -- -- -- -- -- -- -- -- -- 50: UU -- UU -- -- -- -- -- -- -- -- -- -- -- -- -- 60: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 70: -- -- -- -- -- -- -- -- $ sudo decode-dimms # decode-dimms version $Revision$ Memory Serial Presence Detect Decoder By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner, Jean Delvare, Trent Piepho and others Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/6-0050 Guessing DIMM is in bank 1 ---=== SPD EEPROM Information ===--- EEPROM CRC of bytes 0-125 OK (0x16F8) # of bytes written to SDRAM EEPROM 256 Total number of bytes in EEPROM 512 Fundamental Memory type Unknown (0x0c) ---=== Manufacturing Information ===--- Manufacturer Synertek Custom Manufacturer Data 36 16 36 00 00 2B 0C ("6?6??+?") Manufacturing Location Code 0x2B Part Number Undefined Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/6-0052 Guessing DIMM is in bank 3 ---=== SPD EEPROM Information ===--- EEPROM CRC of bytes 0-125 OK (0x16F8) # of bytes written to SDRAM EEPROM 256 Total number of bytes in EEPROM 512 Fundamental Memory type Unknown (0x0c) ---=== Manufacturing Information ===--- Manufacturer Synertek Custom Manufacturer Data 36 16 36 00 00 2B 0C ("6?6??+?") Manufacturing Location Code 0x2B Part Number Undefined Number of SDRAM DIMMs detected and decoded: 2
