27 December 2019

Lenovo ThinkCentre M720qのメモリー交換(8GBから16GBへ)

2019年8月末に購入したLenovo ThinkCentre M720qのメモリーを交換し、8GBytesから16GBytesに容量増加させた。

Amazon.co.jpで購入したメモリーはCFD Panram DDR4-2666 8GBytesを2枚。1枚3,645円で、2枚合計7,290円。

20191227-cfd-panram.jpg
CFD Panram DDR4-2666 ノート用メモリ 260pin SO-DIMM 8GB ×2枚

RAMの価格はだんだん下がってきており、この2年間でいえば一番安くなっている。

20191227-ramprice.jpg


20191227-ddr4memory-compare.jpg
新旧のメモリー

左側が交換前のRamaxel Technology製、右側が交換後のCFD Panram

20191227-m720q-memoryslot.jpg
ThinkCentre M720qのDIMMスロットに装着

20191227-m720q-cpuz.jpg
交換後メモリーのSPD情報


交換前メモリーのSPD情報

20191227-m720q-hwinfo.jpg
交換後のシステム情報


交換前のシステム情報

アクセスタイミングが、交換前 17-17-17-39 から交換後 15-17-17-32 に短くなっている。システムの速度は、若干早くなるかな… と考えられる。

Windows版HWiNFO64で出力した新・旧のメモリー情報

交換後 メモリー CFD Panram DDR4-2666 SO-DIMM 8GB
Memory --------------------------------------------------------------------
 
 [General information]
  Total Memory Size:                      16 GBytes
  Total Memory Size [MB]:                 16384
 [Current Performance Settings]
  Maximum Supported Memory Clock:         1600.0 MHz
  Current Memory Clock:                   1197.4 MHz
  Current Timing (tCAS-tRCD-tRP-tRAS):    15-17-17-32
  Memory Channels Supported:              2
  Memory Channels Active:                 2
  Command Rate:                           2T
  Read to Read Delay (tRD_RD) Same Rank:  6T
  Read to Read Delay (tRD_RD) Different Rank: 4T
  Read to Read Delay (tRD_RD) Different DIMM: 7T
  Write to Write Delay (tWR_WR) Same Rank: 6T
  Write to Write Delay (tWR_WR) Different Rank: 4T
  Write to Write Delay (tWR_WR) Different DIMM: 7T
  Read to Write Delay (tRD_WR) Same Rank: 9T
  Read to Write Delay (tRD_WR) Different Rank: 9T
  Read to Write Delay (tRD_WR) Different DIMM: 11T
  Write to Read Delay (tWR_RD) Same Rank (tWTR): 28T
  Write to Read Delay (tWR_RD) Different Rank: 22T
  Write to Read Delay (tWR_RD) Different DIMM: 6T
  RAS# to RAS# Delay (tRRD):              8T
  Refresh Cycle Time (tRFC):              420T
  Four Activate Window (tFAW):            26T
 
Row: 0 - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G ------
 
 [General Module Information]
  Module Number:                          0
  Module Size:                            8 GBytes
  Memory Type:                            DDR4 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           1333.3 MHz (DDR4-2666 / PC4-21300)
  Module Manufacturer:                    Panram International
  Module Part Number:                     D4N2666PS-8G
  Module Revision:                        0.0
  Module Serial Number:                   1392727633
  Module Manufacturing Date:              Year: 2019, Week: 45
  Module Manufacturing Location:          0
  SDRAM Manufacturer:                     SK Hynix
  DRAM Steppping:                         0.0
  Error Check/Correction:                 None
 [Module Characteristics]
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         8192 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Die Count:                              1
  Module Nominal Voltage (VDD):           1.2 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.62500 ns
  CAS# Latencies Supported:               9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  Minimum CAS# Latency Time (tAAmin):     12.000 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.500 ns
  Minimum Row Precharge Time (tRPmin):    13.500 ns
  Minimum Active to Precharge Time (tRASmin): 26.125 ns
  Supported Module Timing at 1333.3 MHz:  16-18-18-35
  Supported Module Timing at 1200.0 MHz:  15-17-17-32
  Supported Module Timing at 1066.7 MHz:  13-15-15-28
  Supported Module Timing at 933.3 MHz:   12-13-13-25
  Supported Module Timing at 800.0 MHz:   10-11-11-21
  Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns
  Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns
 [Features]
  Module Temperature Sensor (TSOD):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm
  Address Mapping from Edge Connector to DRAM: Mirrored
 [Intel Extreme Memory Profile (XMP)]
  XMP Revision:                           2.0
 [Certified Profile [Enabled]]
  Module VDD Voltage Level:               1.20 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  CAS# Latencies Supported:               9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  Minimum CAS# Latency Time (tAAmin):     11.875 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.375 ns
  Minimum Row Precharge Time (tRPmin):    13.375 ns
  Minimum Active to Precharge Time (tRASmin): 26.125 ns
  Supported Module Timing at 1333.3 MHz:  16-18-18-35
  Supported Module Timing at 1200.0 MHz:  15-17-17-32
  Supported Module Timing at 1066.7 MHz:  13-15-15-28
  Supported Module Timing at 933.3 MHz:   12-13-13-25
  Supported Module Timing at 800.0 MHz:   10-11-11-21
  Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns
 
Row: 2 - 8 GB PC4-21300 DDR4 SDRAM Panram International D4N2666PS-8G ------
 
 [General Module Information]
  Module Number:                          2
  Module Size:                            8 GBytes
  Memory Type:                            DDR4 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           1333.3 MHz (DDR4-2666 / PC4-21300)
  Module Manufacturer:                    Panram International
  Module Part Number:                     D4N2666PS-8G
  Module Revision:                        0.0
  Module Serial Number:                   1392726954
  Module Manufacturing Date:              Year: 2019, Week: 45
  Module Manufacturing Location:          0
  SDRAM Manufacturer:                     SK Hynix
  DRAM Steppping:                         0.0
  Error Check/Correction:                 None
 [Module Characteristics]
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         8192 Mb
  Number Of Ranks:                        1
  Device Width:                           8 bits
  Bus Width:                              64 bits
  Die Count:                              1
  Module Nominal Voltage (VDD):           1.2 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.62500 ns
  CAS# Latencies Supported:               9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  Minimum CAS# Latency Time (tAAmin):     12.000 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.500 ns
  Minimum Row Precharge Time (tRPmin):    13.500 ns
  Minimum Active to Precharge Time (tRASmin): 26.125 ns
  Supported Module Timing at 1333.3 MHz:  16-18-18-35
  Supported Module Timing at 1200.0 MHz:  15-17-17-32
  Supported Module Timing at 1066.7 MHz:  13-15-15-28
  Supported Module Timing at 933.3 MHz:   12-13-13-25
  Supported Module Timing at 800.0 MHz:   10-11-11-21
  Minimum Active to Active/Refresh Time (tRCmin): 39.750 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 3.674 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 5.900 ns
  Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.250 ns
 [Features]
  Module Temperature Sensor (TSOD):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        1 - 2 mm
  Address Mapping from Edge Connector to DRAM: Mirrored
 [Intel Extreme Memory Profile (XMP)]
  XMP Revision:                           2.0
 [Certified Profile [Enabled]]
  Module VDD Voltage Level:               1.20 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  CAS# Latencies Supported:               9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
  Minimum CAS# Latency Time (tAAmin):     11.875 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.375 ns
  Minimum Row Precharge Time (tRPmin):    13.375 ns
  Minimum Active to Precharge Time (tRASmin): 26.125 ns
  Supported Module Timing at 1333.3 MHz:  16-18-18-35
  Supported Module Timing at 1200.0 MHz:  15-17-17-32
  Supported Module Timing at 1066.7 MHz:  13-15-15-28
  Supported Module Timing at 933.3 MHz:   12-13-13-25
  Supported Module Timing at 800.0 MHz:   10-11-11-21
  Minimum Active to Active/Refresh Time (tRCmin): 39.500 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 25.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 4.299 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.525 ns
交換前 メモリー Ramaxel Technology DDR4-2666 SO-DIMM 8GB
Memory --------------------------------------------------------------------
 
 [General information]
  Total Memory Size:                      8 GBytes
  Total Memory Size [MB]:                 8192
 [Current Performance Settings]
  Maximum Supported Memory Clock:         1600.0 MHz
  Current Memory Clock:                   1196.8 MHz
  Current Timing (tCAS-tRCD-tRP-tRAS):    17-17-17-39
  Memory Channels Supported:              2
  Memory Channels Active:                 2
  Command Rate:                           2T
  Read to Read Delay (tRD_RD) Same Rank:  6T
  Read to Read Delay (tRD_RD) Different Rank: 4T
  Read to Read Delay (tRD_RD) Different DIMM: 7T
  Write to Write Delay (tWR_WR) Same Rank: 6T
  Write to Write Delay (tWR_WR) Different Rank: 4T
  Write to Write Delay (tWR_WR) Different DIMM: 7T
  Read to Write Delay (tRD_WR) Same Rank: 9T
  Read to Write Delay (tRD_WR) Different Rank: 9T
  Read to Write Delay (tRD_WR) Different DIMM: 11T
  Write to Read Delay (tWR_RD) Same Rank (tWTR): 30T
  Write to Read Delay (tWR_RD) Different Rank: 24T
  Write to Read Delay (tWR_RD) Different DIMM: 6T
  RAS# to RAS# Delay (tRRD):              8T
  Refresh Cycle Time (tRFC):              420T
  Four Activate Window (tFAW):            36T
 
Row: 0 - 4 GB PC4-21300 DDR4 SDRAM Ramaxel Technology RMSA3270ME86H9F-26 --
 
 [General Module Information]
  Module Number:                          0
  Module Size:                            4 GBytes
  Memory Type:                            DDR4 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           1333.3 MHz (DDR4-2666 / PC4-21300)
  Module Manufacturer:                    Ramaxel Technology
  Module Part Number:                     RMSA3270ME86H9F-26
  Module Revision:                        4.1
  Module Serial Number:                   897281297
  Module Manufacturing Date:              Year: 2019, Week: 29
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     Micron Tech.
  Error Check/Correction:                 None
 [Module Characteristics]
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         8192 Mb
  Number Of Ranks:                        1
  Device Width:                           16 bits
  Bus Width:                              64 bits
  Die Count:                              1
  Module Nominal Voltage (VDD):           1.2 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.60000 ns
  CAS# Latencies Supported:               10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23
  Minimum CAS# Latency Time (tAAmin):     13.750 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.750 ns
  Minimum Row Precharge Time (tRPmin):    13.750 ns
  Minimum Active to Precharge Time (tRASmin): 32.000 ns
  Supported Module Timing at 1333.3 MHz:  19-19-19-43
  Supported Module Timing at 1200.0 MHz:  17-17-17-39
  Supported Module Timing at 1066.7 MHz:  15-15-15-35
  Supported Module Timing at 933.3 MHz:   13-13-13-30
  Supported Module Timing at 800.0 MHz:   11-11-11-26
  Supported Module Timing at 666.7 MHz:   10-10-10-22
  Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 5.300 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.400 ns
  Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns
 [Features]
  Module Temperature Sensor (TSOD):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        <= 1 mm
  Address Mapping from Edge Connector to DRAM: Standard
 
Row: 2 - 4 GB PC4-21300 DDR4 SDRAM Ramaxel Technology RMSA3270ME86H9F-26 --
 
 [General Module Information]
  Module Number:                          2
  Module Size:                            4 GBytes
  Memory Type:                            DDR4 SDRAM
  Module Type:                            SO-DIMM
  Memory Speed:                           1333.3 MHz (DDR4-2666 / PC4-21300)
  Module Manufacturer:                    Ramaxel Technology
  Module Part Number:                     RMSA3270ME86H9F-26
  Module Revision:                        4.1
  Module Serial Number:                   897281041
  Module Manufacturing Date:              Year: 2019, Week: 29
  Module Manufacturing Location:          1
  SDRAM Manufacturer:                     Micron Tech.
  Error Check/Correction:                 None
 [Module Characteristics]
  Row Address Bits:                       16
  Column Address Bits:                    10
  Module Density:                         8192 Mb
  Number Of Ranks:                        1
  Device Width:                           16 bits
  Bus Width:                              64 bits
  Die Count:                              1
  Module Nominal Voltage (VDD):           1.2 V
  Minimum SDRAM Cycle Time (tCKAVGmin):   0.75000 ns
  Maximum SDRAM Cycle Time (tCKAVGmax):   1.60000 ns
  CAS# Latencies Supported:               10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23
  Minimum CAS# Latency Time (tAAmin):     13.750 ns
  Minimum RAS# to CAS# Delay (tRCDmin):   13.750 ns
  Minimum Row Precharge Time (tRPmin):    13.750 ns
  Minimum Active to Precharge Time (tRASmin): 32.000 ns
  Supported Module Timing at 1333.3 MHz:  19-19-19-43
  Supported Module Timing at 1200.0 MHz:  17-17-17-39
  Supported Module Timing at 1066.7 MHz:  15-15-15-35
  Supported Module Timing at 933.3 MHz:   13-13-13-30
  Supported Module Timing at 800.0 MHz:   11-11-11-26
  Supported Module Timing at 666.7 MHz:   10-10-10-22
  Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
  Minimum Refresh Recovery Time Delay (tRFC1min): 350.000 ns
  Minimum Refresh Recovery Time Delay (tRFC2min): 260.000 ns
  Minimum Refresh Recovery Time Delay (tRFC4min): 160.000 ns
  Minimum Four Activate Window Delay Time (tFAWmin): 30.000 ns
  Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 5.300 ns
  Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 6.400 ns
  Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns
 [Features]
  Module Temperature Sensor (TSOD):       Not Supported
  Module Nominal Height:                  29 - 30 mm
  Module Maximum Thickness (Front):       1 - 2 mm
  Module Maximum Thickness (Back):        <= 1 mm
  Address Mapping from Edge Connector to DRAM: Standard

Linuxでメモリー関連情報を出力すると…

$ sudo dmidecode --type memory
[sudo] vm のパスワード: 
# dmidecode 3.1
Getting SMBIOS data from sysfs.
SMBIOS 3.2.1 present.
# SMBIOS implementations newer than version 3.1.1 are not
# fully supported by this version of dmidecode.
 
Handle 0x003B, DMI type 16, 23 bytes
Physical Memory Array
	Location: System Board Or Motherboard
	Use: System Memory
	Error Correction Type: None
	Maximum Capacity: 32 GB
	Error Information Handle: Not Provided
	Number Of Devices: 2
 
Handle 0x003C, DMI type 17, 40 bytes
Memory Device
	Array Handle: 0x003B
	Error Information Handle: Not Provided
	Total Width: 64 bits
	Data Width: 64 bits
	Size: 8192 MB
	Form Factor: SODIMM
	Set: None
	Locator: ChannelA-DIMM0
	Bank Locator: BANK 0
	Type: DDR4
	Type Detail: Synchronous
	Speed: 2667 MT/s
	Manufacturer: 0770
	Serial Number: 51560353
	Asset Tag: 9876543210
	Part Number: D4N2666PS-8G        
	Rank: 1
	Configured Clock Speed: 2400 MT/s
	Minimum Voltage: 1.2 V
	Maximum Voltage: 1.2 V
	Configured Voltage: 1.2 V
 
Handle 0x003D, DMI type 17, 40 bytes
Memory Device
	Array Handle: 0x003B
	Error Information Handle: Not Provided
	Total Width: 64 bits
	Data Width: 64 bits
	Size: 8192 MB
	Form Factor: SODIMM
	Set: None
	Locator: ChannelB-DIMM0
	Bank Locator: BANK 2
	Type: DDR4
	Type Detail: Synchronous
	Speed: 2667 MT/s
	Manufacturer: 0770
	Serial Number: AA530353
	Asset Tag: 9876543210
	Part Number: D4N2666PS-8G        
	Rank: 1
	Configured Clock Speed: 2400 MT/s
	Minimum Voltage: 1.2 V
	Maximum Voltage: 1.2 V
	Configured Voltage: 1.2 V
 
$ sudo lshw -class memory
  *-firmware                
       詳細: BIOS
       ベンダー: LENOVO
       物理ID: 0
       バージョン: M1UKT45A
       date: 07/11/2019
       サイズ: 64KiB
       容量: 11MiB
       性能: pci upgrade shadowing cdboot bootselect socketedrom edd int13floppy1200 int13floppy720 int13floppy2880 int5printscreen int9keyboard int14serial int17printer acpi usb biosbootspecification uefi
  *-memory
       詳細: システムメモリー
       物理ID: 3b
       スロット: システムボードまたはマザーボード
       サイズ: 16GiB
     *-bank:0
          詳細: SODIMM DDR4 同期 2667 MHz (0.4 ns)
          製品: D4N2666PS-8G
          ベンダー: Hitachi
          物理ID: 0
          シリアル: 51560353
          スロット: ChannelA-DIMM0
          サイズ: 8GiB
          幅: 64 bits
          クロック: 2667MHz (0.4ns)
     *-bank:1
          詳細: SODIMM DDR4 同期 2667 MHz (0.4 ns)
          製品: D4N2666PS-8G
          ベンダー: Hitachi
          物理ID: 1
          シリアル: AA530353
          スロット: ChannelB-DIMM0
          サイズ: 8GiB
          幅: 64 bits
          クロック: 2667MHz (0.4ns)
  *-cache:0
       詳細: L1 キャッシュ
       物理ID: 45
       スロット: L1 Cache
       サイズ: 256KiB
       容量: 256KiB
       性能: synchronous internal write-back unified
       設定: level=1
  *-cache:1
       詳細: L2 キャッシュ
       物理ID: 46
       スロット: L2 Cache
       サイズ: 1MiB
       容量: 1MiB
       性能: synchronous internal write-back unified
       設定: level=2
  *-cache:2
       詳細: L3 キャッシュ
       物理ID: 47
       スロット: L3 Cache
       サイズ: 6MiB
       容量: 6MiB
       性能: synchronous internal write-back unified
       設定: level=3
  *-memory UNCLAIMED
       詳細: RAM memory
       製品: Cannon Lake PCH Shared SRAM
       ベンダー: Intel Corporation
       物理ID: 14.2
       バス情報: pci@0000:00:14.2
       バージョン: 10
       幅: 64 bits
       クロック: 33MHz (30.3ns)
       性能: pm cap_list
       設定: latency=0
       リソース: メモリー:b1236000-b1237fff メモリー:b123c000-b123cfff

SPDはどうしても読めないみたいですね…

$ sudo modprobe eeprom
$ sudo modprobe i2c-i801
$ i2cdetect -l
i2c-3	unknown   	i915 gmbus dpd                  	N/A
i2c-1	unknown   	i915 gmbus dpc                  	N/A
i2c-6	unknown   	SMBus I801 adapter at efa0      	N/A  ← 対象
i2c-4	unknown   	DPDDC-B                         	N/A
i2c-2	unknown   	i915 gmbus misc                 	N/A
i2c-0	unknown   	i915 gmbus dpb                  	N/A
i2c-5	unknown   	DPDDC-D                         	N/A
$ sudo i2cdetect 6  ← 念の為、i2cチャンネル一覧をスキャンしてみる
WARNING! This program can confuse your I2C bus, cause data loss and worse!
I will probe file /dev/i2c-6.
I will probe address range 0x03-0x77.
Continue? [Y/n] 
     0  1  2  3  4  5  6  7  8  9  a  b  c  d  e  f
00:          -- -- -- -- -- 08 -- -- -- -- -- -- -- 
10: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 
20: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 
30: 30 31 -- -- 34 35 36 -- -- -- -- -- -- -- -- -- 
40: -- -- -- -- 44 -- -- -- -- -- -- -- -- -- -- -- 
50: UU -- UU -- -- -- -- -- -- -- -- -- -- -- -- -- 
60: -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 
70: -- -- -- -- -- -- -- --                         
$ sudo decode-dimms
# decode-dimms version $Revision$
 
Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others
 
Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/6-0050
Guessing DIMM is in                              bank 1
 
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125                        OK (0x16F8)
# of bytes written to SDRAM EEPROM               256
Total number of bytes in EEPROM                  512
Fundamental Memory type                          Unknown (0x0c)
 
---=== Manufacturing Information ===---
Manufacturer                                     Synertek
Custom Manufacturer Data                         36 16 36 00 00 2B 0C ("6?6??+?")
Manufacturing Location Code                      0x2B
Part Number                                      Undefined
 
Decoding EEPROM: /sys/bus/i2c/drivers/eeprom/6-0052
Guessing DIMM is in                              bank 3
 
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125                        OK (0x16F8)
# of bytes written to SDRAM EEPROM               256
Total number of bytes in EEPROM                  512
Fundamental Memory type                          Unknown (0x0c)
 
---=== Manufacturing Information ===---
Manufacturer                                     Synertek
Custom Manufacturer Data                         36 16 36 00 00 2B 0C ("6?6??+?")
Manufacturing Location Code                      0x2B
Part Number                                      Undefined
 
Number of SDRAM DIMMs detected and decoded: 2